WS2 Film by Sputtering and Sulfur-Vapor Annealing, and its pMISFET with TiN/HfO2 Top-Gate Stack, TiN Bottom Contact, and Ultra-Thin Body and Box

Publication Information

Title

Japanese:
English:	WS2 Film by Sputtering and Sulfur-Vapor Annealing, and its pMISFET with TiN/HfO2 Top-Gate Stack, TiN Bottom Contact, and Ultra-Thin Body and Box

Author

Language

English

Journal/Book name

Japanese:
English:	Journal of the Electron Devices Society (J-EDS)

Volume, Number, Page

Vol. 9 p. 1117

Published date

Aug. 2021

Publisher

Japanese:
English:

Conference name

Japanese:
English:

Conference site

Japanese:
English: