Effect of AlN spacer layer thickness on the carrier scattering factors in InAlN/AlN/GaN heterostructures | Tokyo Tech Research Repository (T2R2)

Publication Information

Title

Japanese:	InAlN/AlN/GaN構造におけるキャリア散乱要因のAlN層厚依存性
English:	Effect of AlN spacer layer thickness on the carrier scattering factors in InAlN/AlN/GaN heterostructures

Author

Language

Japanese

Journal/Book name

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Volume, Number, Page

Published date

Sept. 10, 2021

Publisher

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Conference name

Japanese:	第82回応用物理学会秋季学術講演会
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Conference site

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