P-type AlAs growth on a GaAs (311)B substrate using carbon auto-doping for low resistance GaAs/AlAs distributed Bragg reflectors

Publication Information

Title

Japanese:
English:	P-type AlAs growth on a GaAs (311)B substrate using carbon auto-doping for low resistance GaAs/AlAs distributed Bragg reflectors

Author

Japanese:	水谷章成, 羽鳥伸明, Ohnoki, N, 西山伸彦, Ohtake, N, 小山二三夫, 伊賀健一.
English:	Akimasa Mizutani, Nobuaki Hatori, Ohnoki, N, Nobuhiko Nishiyama, Ohtake, N, FUMIO KOYAMA, Kenichi Iga.

Language

English

Journal/Book name

Japanese:	Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers
English:	Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers

Volume, Number, Page

Vol. 36 No. 11 pp. 6728-6729

Published date

Aug. 19, 1997

Publisher

Japanese:
English:

Conference name

Japanese:
English:

Conference site

Japanese:
English:

DOI