GaN high electron mobility transistors (HEMTs) with self-upward-polarized AlScN gate dielectrics toward enhancement-mode operation

Publication Information

Title

Japanese:
English:	GaN high electron mobility transistors (HEMTs) with self-upward-polarized AlScN gate dielectrics toward enhancement-mode operation

Author

Japanese:	ChenSi-Meng, TSAISung Lin, 水谷一翔, 星井拓也, 若林整, 筒井一生, Edward Yi Chang, 角嶋邦之.
English:	Si-Meng Chen, Sung Lin Tsai, Kazuto Mizutani, Takuya Hoshii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Edward Yi Chang, Kuniyuki KAKUSHIMA.

Language

English

Journal/Book name

Japanese:
English:	Japanese Journal of Applied Physics

Volume, Number, Page

Volume 61

Published date

June 13, 2022

Publisher

Japanese:
English:

Conference name

Japanese:
English:

Conference site

Japanese:
English: