Physical Analysis of Gate-Source Voltage Dependencies of Parasitic Capacitors, and Their Impacts on Switching Behavior of a Discrete Silicon-Carbide MOSFET

Publication Information

Title

Japanese:
English:	Physical Analysis of Gate-Source Voltage Dependencies of Parasitic Capacitors, and Their Impacts on Switching Behavior of a Discrete Silicon-Carbide MOSFET

Author

Japanese:	椋木康滋, Takeshi Horiguchi, Hiroshi Nakatake, 葛本昌樹, 萩原誠, 赤木泰文.
English:	Yasushige Mukunoki, Takeshi Horiguchi, Hiroshi Nakatake, Masaki Kuzumoto, Makoto Hagiwara, Hirofumi Akagi.

Language

English

Journal/Book name

Japanese:
English:

Volume, Number, Page

Published date

May 2019

Publisher

Japanese:
English:	IEEE

Conference name

Japanese:
English:	2019 10th International Conference on Power Electronics and ECCE Asia (ICPE 2019 - ECCE Asia)

Conference site

Japanese:
English:

DOI