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Title
Japanese:SiC-MOSFET, GaN-HEMTに適用可能なユニバーサルデバイスモデルの開発 
English: 
Author
Japanese: 中嶋純一, 堀口剛司, 浦壁隆浩, 萩原誠.  
English: Junichi Nakashima, Takeshi Horiguchi, takahiro urakabe, Makoto Hagiwara.  
Language Japanese 
Journal/Book name
Japanese: 
English: 
Volume, Number, Page     4-001    pp. 1-2
Published date Mar. 2021 
Publisher
Japanese: 
English: 
Conference name
Japanese:令和3年電気学会全国大会 
English: 
Conference site
Japanese: 
English: 

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