6.5kV耐圧SiC-MOSFETのデバイスモデル開発

Publication Information

Title

Japanese:	6.5kV耐圧SiC-MOSFETのデバイスモデル開発
English:

Author

Japanese:	滕飛, 葛本昌樹, 萩原誠, 石井佑季, 中嶋純一, 堀口剛司, 椋木康滋, 地道拓志.
English:	Fei Teng, Masaki Kuzumoto, Makoto Hagiwara, Yuuki Ishii, Junichi Nakashima, Takeshi Horiguchi, Yasushige Mukunoki, Takushi Jimichi.

Language

Japanese

Journal/Book name

Japanese:
English:

Volume, Number, Page

SPC-19-068

Published date

Oct. 2019

Publisher

Japanese:
English:

Conference name

Japanese:	電気学会研究会資料. SPC, 半導体電力変換研究会
English:

Conference site

Japanese:
English: