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Publication Information
Title
Japanese:
English:
Design and Fabrication Results of Z-gate Layout MOSFETs for Radiation Hardness Integrated Circuit
Author
Japanese:
黒木 海斗
,
木村 有佐
,
平川 顕二
,
岩瀬 正幸
,
小笠原 宗博
,
依田 孝
,
石原 昇
,
伊藤 浩之
.
English:
Kaito Kuroki
,
Arisa Kimura
,
Kenji Hirakawa
,
Masayuki Iwase
,
Munehiro Ogasawara
,
Takashi Yoda
,
Noboru Ishihara
,
Hiroyuki Ito
.
Language
English
Journal/Book name
Japanese:
English:
Japanese Journal of Applied Physics
Volume, Number, Page
Vol. 62 SC1045
Published date
Jan. 31, 2023
Publisher
Japanese:
English:
Conference name
Japanese:
English:
Conference site
Japanese:
English:
©2007
Tokyo Institute of Technology All rights reserved.