Design and Fabrication Results of Z-gate Layout MOSFETs for Radiation Hardness Integrated Circuit

Publication Information

Title

Japanese:
English:	Design and Fabrication Results of Z-gate Layout MOSFETs for Radiation Hardness Integrated Circuit

Author

Japanese:	黒木海斗, 木村有佐, 平川顕二, 岩瀬正幸, 小笠原宗博, 依田孝, 石原昇, 伊藤浩之.
English:	Kaito Kuroki, Arisa Kimura, Kenji Hirakawa, Masayuki Iwase, Munehiro Ogasawara, Takashi Yoda, Noboru Ishihara, Hiroyuki Ito.

Language

English

Journal/Book name

Japanese:
English:	Japanese Journal of Applied Physics

Volume, Number, Page

Vol. 62 SC1045

Published date

Jan. 31, 2023

Publisher

Japanese:
English:

Conference name

Japanese:
English:

Conference site

Japanese:
English: