Hole-doping to a Cu(I)-based semiconductor with an isovalent cation: Utilizing a complex defect as a shallow acceptor

Publication Information

Title

Japanese:
English:	Hole-doping to a Cu(I)-based semiconductor with an isovalent cation: Utilizing a complex defect as a shallow acceptor

Author

Japanese:	K. Matsuzaki, 角田直樹, 熊谷悠, Y. Tang, K. Nomura, 大場史康, 細野秀雄.
English:	K. Matsuzaki, N. Tsunoda, Y. Kumagai, Y. Tang, K. Nomura, F. Oba, HIDEO HOSONO.

Language

English

Journal/Book name

Japanese:
English:	Journal of the American Chemical Society

Volume, Number, Page

vol. 144 pp. 16572–16578

Published date

Sept. 1, 2022

Publisher

Japanese:
English:

Conference name

Japanese:
English:

Conference site

Japanese:
English:

Official URL

DOI