High-Power-Density InAlGaN/GaN HEMT using InGaN back barrier for W-band amplifiers

Publication Information

Title

Japanese:
English:	High-Power-Density InAlGaN/GaN HEMT using InGaN back barrier for W-band amplifiers

Author

Japanese:	J. Kotani, 牧山剛三, T. Ohki, S. Ozaki, N. Okamoto, Y. Minoura, M. Sato, N. Nakamura, 宮本恭幸.
English:	J. Kotani, K. Makiyama, T. Ohki, S. Ozaki, N. Okamoto, Y. Minoura, M. Sato, N. Nakamura, Y. Miyamoto.

Language

English

Journal/Book name

Japanese:
English:	ELECTRON. LETT.

Volume, Number, Page

vol. 59 no. 4 e12715

Published date

Feb. 2023

Publisher

Japanese:
English:

Conference name

Japanese:
English:

Conference site

Japanese:
English:

DOI