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Title
Japanese:Ⅲ-Ｖ族化合物半導体ＦＥＴの深い準位と衝突イオン化に起因する不安定現象に関する研究 
English: 
Author
Japanese: 國弘和明.  
English: Kazuaki Kunihiro.  
Type
Type:Thesis (Ph.D.) 
Country:Japan 
Language Japanese 
Organization name Nagoya University 
Report number  
Conferred date 2004/07/-- 
Judge  

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