Doping-Free Complementary Metal-Oxide-Semiconductor Inverter Based on N-Type and P-Type Tungsten Diselenide Field-Effect Transistors With Aluminum-Scandium Alloy and Tungsten Oxide for Source/Drain Contact

Publication Information

Title

Japanese:
English:	Doping-Free Complementary Metal-Oxide-Semiconductor Inverter Based on N-Type and P-Type Tungsten Diselenide Field-Effect Transistors With Aluminum-Scandium Alloy and Tungsten Oxide for Source/Drain Contact

Author

Japanese:	川那子高暢, 梶川亮介, 水谷一翔, TSAI Sung Lin, 宗田伊理也, 星井拓也, 角嶋邦之, 筒井一生, 若林整.
English:	Takamasa Kawanago, Ryosuke Kajikawa, Kazuto Mizutani, Sung-Lin Tsai, Iriya Muneta, Takuya Hoshii, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi.

Language

English

Journal/Book name

Japanese:
English:	IEEE Journal of the Electron Devices Society

Volume, Number, Page

Vol. 11 p. 15-21

Published date

Nov. 24, 2022

Publisher

Japanese:
English:	IEEE

Conference name

Japanese:
English:

Conference site

Japanese:
English:

Official URL

DOI