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Publication Information
Title
Japanese:
English:
Doping-Free Complementary Metal-Oxide-Semiconductor Inverter Based on N-Type and P-Type Tungsten Diselenide Field-Effect Transistors With Aluminum-Scandium Alloy and Tungsten Oxide for Source/Drain Contact
Author
Japanese:
川那子 高暢
,
梶川 亮介
,
水谷 一翔
,
TSAI Sung Lin
,
宗田 伊理也
,
星井 拓也
,
角嶋 邦之
,
筒井 一生
,
若林 整
.
English:
Takamasa Kawanago
,
Ryosuke Kajikawa
,
Kazuto Mizutani
,
Sung-Lin Tsai
,
Iriya Muneta
,
Takuya Hoshii
,
Kuniyuki Kakushima
,
Kazuo Tsutsui
,
Hitoshi Wakabayashi
.
Language
English
Journal/Book name
Japanese:
English:
IEEE Journal of the Electron Devices Society
Volume, Number, Page
Vol. 11 p. 15-21
Published date
Nov. 24, 2022
Publisher
Japanese:
English:
IEEE
Conference name
Japanese:
English:
Conference site
Japanese:
English:
Official URL
https://ieeexplore.ieee.org/abstract/document/9963927
DOI
https://doi.org/10.1109/JEDS.2022.3224206
©2007
Tokyo Institute of Technology All rights reserved.