Integration of BiSb topological insulator and CoFeB/MgO with perpendicular magnetic anisotropy using an oxide interfacial layer for ultralow power SOT-MRAM cache memory

Publication Information

Title

Japanese:
English:	Integration of BiSb topological insulator and CoFeB/MgO with perpendicular magnetic anisotropy using an oxide interfacial layer for ultralow power SOT-MRAM cache memory

Author

Japanese:	HO HOANG HUY, ZHANG RUIXIAN, 白倉孝典, S. Takahashi, Y. Hirayama, PHAM NAM HAI.
English:	Ho Hoang Huy, R. Zhang, T. Shirokura, S. Takahashi, Y. Hirayama, Pham Nam Hai.

Language

English

Journal/Book name

Japanese:
English:

Volume, Number, Page

Published date

Sept. 19, 2023

Publisher

Japanese:
English:

Conference name

Japanese:
English:	84th JSAP Autumn meeting

Conference site

Japanese:
English:	Kumamoto