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Publication Information
Title
Japanese:
English:
Integration of BiSb topological insulator and CoFeB/MgO with perpendicular magnetic anisotropy using an oxide interfacial layer for ultralow power SOT-MRAM cache memory
Author
Japanese:
HO HOANG HUY
,
ZHANG RUIXIAN
,
白倉 孝典
, S. Takahashi, Y. Hirayama,
PHAM NAM HAI
.
English:
Ho Hoang Huy
,
R. Zhang
,
T. Shirokura
, S. Takahashi, Y. Hirayama,
Pham Nam Hai
.
Language
English
Journal/Book name
Japanese:
English:
Volume, Number, Page
Published date
Sept. 19, 2023
Publisher
Japanese:
English:
Conference name
Japanese:
English:
84th JSAP Autumn meeting
Conference site
Japanese:
English:
Kumamoto
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Tokyo Institute of Technology All rights reserved.