Band structure and ferromagnetism in III-V ferromagnetic semiconductor GaMnAs | Science Tokyo Research Repository (T2R2)

Publication Information

Title

Japanese:	III-V族強磁性半導体GaMnAsにおけるバンド構造と強磁性
English:	Band structure and ferromagnetism in III-V ferromagnetic semiconductor GaMnAs

Author

Japanese:	宗田伊理也.
English:	Iriya Muneta.

Type

Type:	Thesis (Ph.D.)
Country:	Japan

Language

English

Organization name

The University of Tokyo

Report number

Conferred date

2014/03/24

Judge

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