nMOSFET応用に向けた窒化ハフニウムの硫化による二硫化ハフニウム膜の作製

Publication Information

Title

Japanese:	nMOSFET応用に向けた窒化ハフニウムの硫化による二硫化ハフニウム膜の作製
English:

Author

Japanese:	篠原健朗, 宗田伊理也, 角嶋邦之, 筒井一生, 若林整.
English:	Takeaki Shinohara, Iriya Muneta, Kuniyuki KAKUSHIMA, KAZUO TSUTSUI, Hitoshi Wakabayashi.

Language

Japanese

Journal/Book name

Japanese:
English:

Volume, Number, Page

Published date

Mar. 16, 2017

Publisher

Japanese:
English:

Conference name

Japanese:	第64回応用物理学会春季学術講演会
English:	64th JSAP Spring meeting

Conference site

Japanese:	横浜
English:	Yokohama