Si/CaF<sub>2</sub> 四重障壁共鳴トンネル構造を用いた抵抗変化メモリ素子の室温パルス応答特性

Publication Information

Title

Japanese:	Si/CaF₂ 四重障壁共鳴トンネル構造を用いた抵抗変化メモリ素子の室温パルス応答特性
English:	Room Temperature Pulse Response Characteristics of Resistance Switching Memory using Si/CaF₂ Quadruple-Barrier Resonant Tunneling Structure

Author

Japanese:	星野麻衣子, 宇佐見遼也, 村上寛太, 渡辺正裕.
English:	Maiko Hoshino, Ryoya Usami, Kanta Murakami, MASAHIRO WATANABE.

Language

Japanese

Journal/Book name

Japanese:
English:

Volume, Number, Page

12-077

Published date

Sept. 19, 2023

Publisher

Japanese:
English:

Conference name

Japanese:	第84回応用物理学会学術講演会
English:	The 84th Autumn Meeting of The Japan Society of Applied Physics

Conference site

Japanese:	熊本県熊本市
English: