GaN high electron mobility transistors (HEMTs) with self-upward-polarized AlScN gate dielectrics toward enhancement-mode operation

Publication Information

Title

Japanese:	GaN high electron mobility transistors (HEMTs) with self-upward-polarized AlScN gate dielectrics toward enhancement-mode operation
English:	GaN high electron mobility transistors (HEMTs) with self-upward-polarized AlScN gate dielectrics toward enhancement-mode operation

Author

Japanese:	Si-Meng Chen, Sung-Lin Tsai, Kazuto Mizutani, 星井拓也, Hitoshi Wakabayashi, Kazuo Tsutsui, Edward Yi Chang, Kuniyuki Kakushima.
English:	Si-Meng Chen, Sung-Lin Tsai, Kazuto Mizutani, Takuya Hoshii, Hitoshi Wakabayashi, Kazuo Tsutsui, Edward Yi Chang, Kuniyuki Kakushima.

Language

English

Journal/Book name

Japanese:	Japanese Journal of Applied Physics
English:	Japanese Journal of Applied Physics

Volume, Number, Page

Published date

July 1, 2022

Publisher

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English:

Conference name

Japanese:
English:

Conference site

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Official URL

DOI