Performance Improvements of P-channel GaN HFETs by Atomic Layer Etching using Nitrogen Plasma

Publication Information

Title

Japanese:
English:	Performance Improvements of P-channel GaN HFETs by Atomic Layer Etching using Nitrogen Plasma

Author

Japanese:	木村匠之介, 星井拓也, 角嶋邦之, 若林整, 筒井一生.
English:	Shonosuke Kimura, Takuya Hoshii, Kuniyuki Kakushima, Hitoshi Wakabayashi, Kazuo Tsutsui.

Language

English

Journal/Book name

Japanese:
English:

Volume, Number, Page

Published date

Oct. 2022

Publisher

Japanese:
English:

Conference name

Japanese:
English:	the International Workshop on Nitride Semiconductors 2022

Conference site

Japanese:
English:	Berlin