Integration of BiSb Topological Insulator and CoFeB/MgO With Perpendicular Magnetic Anisotropy Using an Oxide Interfacial Layer for Ultralow Power SOT-MRAM Cache Memory

Publication Information

Title

Japanese:
English:	Integration of BiSb Topological Insulator and CoFeB/MgO With Perpendicular Magnetic Anisotropy Using an Oxide Interfacial Layer for Ultralow Power SOT-MRAM Cache Memory

Author

Japanese:	HO HOANG HUY, ZHANG RUIXIAN, 白倉孝典, Shigeki Takahashi, Yoshiyuki Hirayama, PHAM NAM HAI.
English:	Ho Hoang Huy, Zhang Ruixian, Takanori Shirokura, Shigeki Takahashi, Yoshiyuki Hirayama, Pham Nam Hai.

Language

English

Journal/Book name

Japanese:
English:	IEEE Transactions on Magnetics

Volume, Number, Page

Vol. 59 No. 11 pp. 3400905

Published date

May 11, 2023

Publisher

Japanese:
English:

Conference name

Japanese:
English:

Conference site

Japanese:
English:

DOI