Improved electrical characteristics of 4H-SiC (0001) MOS devices with atomic layer deposited SiO2 gate dielectric with H2O plasma

Publication Information

Title

Japanese:	Improved electrical characteristics of 4H-SiC (0001) MOS devices with atomic layer deposited SiO2 gate dielectric with H2O plasma
English:	Improved electrical characteristics of 4H-SiC (0001) MOS devices with atomic layer deposited SiO2 gate dielectric with H2O plasma

Author

Japanese:	Li An, 星井拓也, 筒井一生, 若林整, 角嶋邦之.
English:	An Li, Takuya Hoshii, Kazuo Tsutsui, Hitoshi Wakabayashi, Kuniyuki Kakushima.

Language

English

Journal/Book name

Japanese:	Japanese Journal of Applied Physics
English:	Japanese Journal of Applied Physics

Volume, Number, Page

Volume 63 Number 6 066503

Published date

June 2024

Publisher

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English:

Conference name

Japanese:
English:

Conference site

Japanese:
English:

Official URL

DOI