Quantum confinement effects in amorphous In-Ga-Zn-O thin-film transistors with quantum well channel

Publication Information

Title

Japanese:
English:	Quantum confinement effects in amorphous In-Ga-Zn-O thin-film transistors with quantum well channel

Author

Japanese:	安部勝美, 神谷利夫, 細野秀雄.
English:	Abe Katsumi, Kamiya Toshio, Hosono Hideo.

Language

English

Journal/Book name

Japanese:
English:	Applied Physics Letters

Volume, Number, Page

Published date

Nov. 2024

Publisher

Japanese:
English:

Conference name

Japanese:
English:

Conference site

Japanese:
English:

DOI