Interface properties of SiC MOS devices with NH3 plasma nitridation of ultrathin SiO2 interfacial layer

Publication Information

Title

Japanese:
English:	Interface properties of SiC MOS devices with NH3 plasma nitridation of ultrathin SiO2 interfacial layer

Author

Japanese:	Li An, 星井拓也, 筒井一生, 若林整, 角嶋邦之.
English:	An Li, Takuya Hoshii, Kazuo Tsutsui, Hitoshi Wakabayashi, Kuniyuki Kakushima.

Language

English

Journal/Book name

Japanese:
English:	Japanese Journal of Applied Physics

Volume, Number, Page

Vol. 64

Published date

Mar. 6, 2025

Publisher

Japanese:
English:

Conference name

Japanese:
English:

Conference site

Japanese:
English:

Official URL

DOI