Study of interface trap density in Ge quantum devices

Publication Information

Title

Japanese:
English:	Study of interface trap density in Ge quantum devices

Author

Japanese:	Wen Chutian, 荒川雄登, 松岡竜太郎, 溝口来成, 米田淳, 小寺哲夫.
English:	Chutian Wen, Yuto Arakawa, Ryutaro Matsuoka, Raisei Mizokuchi, Jun Yoneda, Tetsuo Kodera.

Language

English

Journal/Book name

Japanese:
English:

Volume, Number, Page

Published date

Mar. 14, 2025

Publisher

Japanese:
English:

Conference name

Japanese:	第72回応用物理学会春季学術講演会
English:

Conference site

Japanese:	千葉県
English: