Structural and Electrical Properties of Si-Doped β-Ga2O3 Thin Films Deposited by RF Sputtering: Effects of Oxygen Flow Ratio and Post-Annealing Temperature

Publication Information

Title

Japanese:
English:	Structural and Electrical Properties of Si-Doped β-Ga2O3 Thin Films Deposited by RF Sputtering: Effects of Oxygen Flow Ratio and Post-Annealing Temperature

Author

Japanese:	Haechan Kim, 久保田雄太, 松下伸広, Gonjae Lee, Hong JeongSoo.
English:	Haechan Kim, Yuta Kubota, Nobuhiro Matsushita, Gonjae Lee, Jeongsoo Hong.

Language

English

Journal/Book name

Japanese:
English:	Coatings

Volume, Number, Page

Vol. 15 10 1181

Published date

Oct. 9, 2025

Publisher

Japanese:
English:

Conference name

Japanese:
English:

Conference site

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English: