Dependence of Etching Rate Ratio on Ion Energy and Crystal Orientation for KOH Etching of Amorphized Si Etching Masks Formed by N+ Irradiation

Publication Information

Title

Japanese:
English:	Dependence of Etching Rate Ratio on Ion Energy and Crystal Orientation for KOH Etching of Amorphized Si Etching Masks Formed by N+ Irradiation

Author

Japanese:	佐藤美那, 遠西美重, 松谷晃宏.
English:	Mina Sato, Mie Tohnishi, Akihiro Matsutani.

Language

English

Journal/Book name

Japanese:
English:

Volume, Number, Page

Published date

Nov. 2025

Publisher

Japanese:
English:

Conference name

Japanese:
English:	MNC2025 (38th International Microprocesses and Nanotechnology Conference)

Conference site

Japanese:
English: