AlN Films Epitaxialy Formed by Direct Nitridation of Sapphire using Aluminum Oxynitride as a Buffer Layer

論文・著書情報

タイトル

和文:
英文:	AlN Films Epitaxialy Formed by Direct Nitridation of Sapphire using Aluminum Oxynitride as a Buffer Layer

著者

和文:	W.Nakao, H.Fukuyama, K.Nagata.
英文:	W.Nakao, H.Fukuyama, K.Nagata.

言語

English

掲載誌/書名

和文:
英文:	State-of-the-Art Program on Compound Semiconductors XXXVI and Wide Bandgap Semiconductors for Photonic and Electronic Devices and Sensors II, (The Electrochemical Society), Philadelphia, PA, USA, May (2002)

巻, 号, ページ

Vol. 2002-3 pp. 76-82

出版年月

2002年

出版者

和文:
英文:	State-of-the-Art Program on Compound Semiconductors XXXVI and Wide Bandgap Semiconductors for Photonic and Electronic Devices and Sensors II, (The Electrochemical Society), Philadelphia, PA, USA, May (2002)

会議名称

和文:
英文:

開催地

和文:
英文: