Effects of oxidation and annealing temperature on grain boundary properties in polycrystalline silicon probed using nanometer-scale point-contact devices”, Polycrystalline Semiconductors VII – Bulk Materials, Thin Films, and Devices, T. Sameshima, T. Fuyuki, H.P. Strunk, J.H. Werner eds., in Series ‘Solid State Phenomena’
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和文:
T. Kamiya,
Y. Furuta,
Y. -T. Tan,
Z. A. K. Durrani,
H. Mizuta,
H. Ahmed.
英文:
T. Kamiya,
Y. Furuta,
Y. -T. Tan,
Z. A. K. Durrani,
H. Mizuta,
H. Ahmed.
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