Extending the Photoresponse of TiO2 to the Visible Light Region: Photoelectrochemical Behavior of TiO2 Thin Films Prepared by the Radio Frequency Magnetron Sputtering Deposition Method
TiO2 thin films prepared by a radio frequency magnetron sputtering (RF-MS) deposition method were found
to show an enhanced photoelectrochemical response in the visible light region. By controlling the temperature
and the gaseous medium during the deposition step, it was possible to control the properties of these films.
The photoelectrochemical behavior of the sputtered TiO2 thin films was compared with that of a commercial
TiO2 sample, and the sputtered films showed higher incident photon to the charge carrier generation efficiency
(IPCE of 12.6% at 350 nm) as well as power conversion efficiency (0.33% at 1.84 mW/cm2) than the
commercial TiO2 sample. Femtosecond transient absorption spectroscopy experiments have revealed that a
major fraction of photogenerated electrons and holes recombine within a few picoseconds, thus limiting
photocurrent generation efficiency. The mechanistic insights obtained in the present study should aid in
designing semiconductor nanostructures that will maximize the charge separation efficiency and extend the
response of the large band gap semiconductor TiO2 into visible light regions.
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