We propose a widegap II-VI semiconductor alloy, MgxZn1-xO, for the fabrication of heteroepitaxial ultraviolet light emitting devices based on ZnO. The c-axis oriented MgxZn1-xO films were epitaxially grown by pulsed laser deposition on ZnO epitaxial films and sapphire (0001) substrates using ceramic targets. Solid solution films were prepared with Me content up to x=0.33, achieving a band gap of 3.99 eV at room temperature. MgO impurity phase segregated at x greater than or equal to 0.36. Lattice constants of MgxZn1-xO films changed slightly (similar to 1%), increasing ina axis and decreasing in c-axis direction with increasing x. These films showed ultraviolet photoluminescence at energies from 3.36 (x=0) to 3.87 eV (x=0.33) at 4.2 K.
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