Temperature dependencies of field-effect transfer characteristics and Hall-effect properties have been studied for La1/3Sr2/3FeO3 epitaxial films, which exhibit abrupt metal-to-insulator transition identical to that of a bulk. The field-effect transistors were fabricated with a channel consisting of an epitaxial interface between the La1/3Sr2/3FeO3 film and an insulating SrTiO3 single crystal substrate with a gate electrode on the back side. They operated in the p-type accumulation mode both in the high-temperature metallic state and low-temperature charge-ordered state. Field-effect mobility showed a good agreement with Hall mobility in the high-temperature metallic state. In addition, the Hall mobility in the charge-ordered state was found to exhibit an anomalous minus (n-type) sign although that in the metallic state and the field-effect results at all temperatures exhibited normal (p-type) sign. The Hall coefficient in the charge-ordered state is thought to be dominated by an anomalous Hall effect, and field-effect measurements can give information of charge transport on such conditions.
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