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タイトル
和文: 
英文:MgxZn1-xO films with a low residual donor concentration (< 1015 cm-3) grown by molecular beam epitaxy 
著者
和文: 赤坂 俊輔, 中原 健, 塚崎 敦, 大友 明, 川崎 雅司.  
英文: S. Akasaka, K. Nakahara, A. Tsukazaki, A. Ohtomo, M. Kawasaki.  
言語 English 
掲載誌/書名
和文: 
英文:Applied Physics Express 
巻, 号, ページ Vol. 3    No. 7    071101-1-3
出版年月 2010年7月 
出版者
和文: 
英文:The Japan Society of Applied Physics 
会議名称
和文: 
英文: 
開催地
和文: 
英文: 
公式リンク <Go to ISI>://000280385500003
 
DOI https://doi.org/10.1143/apex.3.071101
アブストラクト We have grown undoped MgxZn1-xO films on Zn-polar ZnO substrates by using a plasma-assisted molecular beam epitaxy technique. The residual donor concentration (ND) was evaluated by capacitance-voltage measurements of the Schottky junctions formed using poly(3,4-ethylene dioxythiophene): poly(styrene sulfonate) films as electrodes. Increasing the Zn/O flux ratio during the growth reduced the value of ND to reach (2-7) x 10(14) cm(-3) for MgxZn1-xO films with MgO molar fractions x ranging from 0 to 0.39. These MgxZn1-xO films with low residual ND values would be suitable host materials for p-type doping.

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