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タイトル
和文: 
英文:Quantitative analysis of atomic disorders in full-Heusler Co2FeSi alloy thin films using x-ray diffraction with Co Kα and Cu Kα sources 
著者
和文: 高村 陽太, 中根 了昌, 菅原 聡.  
英文: Y. Takamura, R. Nakane, S. Sugahara.  
言語 English 
掲載誌/書名
和文: 
英文:J. Appl. Phys. 
巻, 号, ページ Vol. 107        pp. 09B111/1-3
出版年月 2010年4月 
出版者
和文: 
英文:American Institute of Physics 
会議名称
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英文: 
開催地
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英文: 
ファイル
DOI https://doi.org/10.1063/1.3350914
アブストラクト The authors developed a new analysis technique for atomic disorder structures in full-Heusler alloys using x-ray diffraction XRD with Co K and Cu K sources. The technique can quantitatively evaluate all the atomic disorders for the exchanges between X, Y, and Z atoms in full-Heusler X2YZ alloys. In particular, the technique can treat the DO3 disorder that cannot be analyzed by ordinary Cu K XRD. By applying this technique to full-Heusler Co2FeSi alloy thin films formed by rapid thermal annealing RTA, RTA-temperature TA dependence of the atomic disorders was revealed. The site occupancies of Co, Fe, and Si atoms on their original sites were 98%, 90%, and 93%, respectively, for the film formed at TA=800 °C, indicating that the RTA-formed Co2FeSi film had the L21 structure with the extremely high degree of ordering.

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