The 32nd Electronics Division Meeting of the Ceramic Society of Japan
開催地
和文:
東京
英文:
アブストラクト
Al2O3 thin films were deposited by MOCVD on Cr2O3/YSZ buffered Si(001) substrate and YSZ substrate. Cr2O3/YSZ buffer layer was deposited by PLD. Al2O3 deposition was carried out by cold wall type CVD chamber using tri-methyl aluminum (TMA) and tri-isobutyl aluminum (TIBAl). The homogeneous nucleation of amorphous Al2O3 in gas phase had strong influence on deposition of film. The effect of the substrate kinds, Cr2O3/YSZ/Si or YSZ, on the Al2O3 films growth rate and morphology was investigated. Cr2O3 buffer layer is effective to crystallize α-Al2O3 at lower temperature below 1000 oC.
各種検索
サポート
ヘルプ