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タイトル
和文: 
英文:Minority carrier lifetime of thin polycrystalline silicon nanowire films on polycrystalline silicon layer prepared by aluminum-induced crystallization 
著者
和文: 山崎 竜也, Shinya Kato, 宮島 晋介, 小長井 誠.  
英文: Tatsuya Yamazaki, Shinya Kato, Shinsuke Miyajima, Makoto Konagai.  
言語 English 
掲載誌/書名
和文: 
英文:SPIE Proceedings 
巻, 号, ページ Vol. 9178        pp. 91780L
出版年月 2014年10月7日 
出版者
和文: 
英文: 
会議名称
和文: 
英文:SPIE Optics + Photonics 2014 Conference 9178 Next Generation Technology for Solar Energy Conversion V 
開催地
和文: 
英文:San Diego, California 
DOI https://doi.org/10.1117/12.2061663
アブストラクト We demonstrate the minority carrier lifetime measurements of polycrystalline silicon nanowires (poly-SiNW) films passivated with aluminum oxide (Al2O3) deposited by atomic layer deposition (ALD). The poly-SiNW films were prepared by metal-assisted chemical etching of poly-Si films. The poly-Si films were prepared by solid phase crystallization of a-Si films deposited by radio-frequency sputtering on aluminum induced crystallized poly-Si template. The deposition of an ALD-Al2O3 passivation layer and subsequent annealing enabled us to measure effective minority carrier lifetime of the poly-SiNW films. The effective lifetime was found to be 5.76 μs. This result indicates that ALDAl2O3 is beneficial to surface passivation of poly-SiNW films.

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