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タイトル
和文: 
英文:Development of transparent and conductive Al doped Zn1-xMgxO thin film by sol-gel process with two-step annealing 
著者
和文: MENG LEI, 宮島 晋介, 小長井 誠.  
英文: Lei Meng, Shinsuke Miyajima, Makoto Konagai.  
言語 English 
掲載誌/書名
和文: 
英文:SPIE Proceedings 
巻, 号, ページ Vol. 9177        pp. 91770G
出版年月 2014年10月7日 
出版者
和文: 
英文: 
会議名称
和文: 
英文:SPIE Optics + Photonics 2014 Conference 9177 Thin Films for Solar and Energy Technology VI 
開催地
和文: 
英文:San Diego, California 
DOI https://doi.org/10.1117/12.2060236
アブストラクト Al doped Zn1-xMgxO (AZMO) thin film was developed by sol-gel process with two-step annealing. Effect of annealing temperature on structural, optical and electrical properties was investigated. It was found that first annealing mainly determines the film crystallinity and grain size, while the second annealing plays a critical role in activating dopant. All of AZMO thin films show a (002) preferential orientation and a high transmittance of over 85% in wavelength region from 400 nm to 1500 nm. A resistivity of 2.1×10-2 Ω∙cm was achieved for a film with an optical bandgap of 3.6 eV.

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