We report the layer-by-layer growth and electronic properties of (111)-oriented, nearly stoichiometric TiH2 films (δ-phase) pulsed-laser-deposited on α-Al2O3(0001) using a TiH2 ceramic target. The content of the δ-phase increased as the decomposition to the Ti metal was suppressed at low temperatures. Moreover, long-lasting oscillations of reflection high-energy electron diffraction intensity were observed during the initial growth of the δ-phase film. The film showed metallic conductivity down to low temperatures. The results of Ti 2p–3d resonant photoemission spectroscopy and Hall measurement were consistent with those of the conducting electrons residing in the Ti 3d states.
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