1-nm-capacitance-equivalent-thickness HfO2/Al2O3/InGaAs metal-oxide-semiconductor structure with low interface trap density and low gate leakage current density
英文:
1-nm-capacitance-equivalent-thickness HfO2/Al2O3/InGaAs metal-oxide-semiconductor structure with low interface trap density and low gate leakage current density
著者
和文:
R. Suzuki,
N. Taoka,
M. Yokoyama,
S. Lee,
S. H. Kim,
T. Hoshii,
T. Yasuda,
W. Jevasuwan,
T. Maeda,
O. Ichikawa,
N. Fukuhara,
M. Hata,
M. Takenaka,
S. Takagi.
英文:
R. Suzuki,
N. Taoka,
M. Yokoyama,
S. Lee,
S. H. Kim,
T. Hoshii,
T. Yasuda,
W. Jevasuwan,
T. Maeda,
O. Ichikawa,
N. Fukuhara,
M. Hata,
M. Takenaka,
S. Takagi.
We have studied the impact of the Al2O3 inter-layer on interface properties of HfO2/InGaAs metal-oxide-semiconductor (MOS) interfaces. We have found that the insertion of the ultrathin Al2O3 inter-layer (2 cycle: 0.2nm) can effectively improve the HfO2/InGaAs interface properties. The frequency dispersion and the stretch-out of C-V characteristics are improved, and the interface trap density (Dit) value is significantly decreased by the 2 cycle Al2O3 inter-layer. Finally, we have demonstrated the 1-nm-thick capacitance equivalent thickness in the HfO2/Al2O3/InGaAs MOS capacitors with good interface properties and low gate leakage of 2.4?10?2A/cm2.
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