Impact of Fermi Level Pinning Due to Interface Traps Inside the Conduction Band on the Inversion-Layer Mobility in InGaAs Metal–Oxide–Semiconductor Field Effect Transistors

論文・著書情報

タイトル

和文:	Impact of Fermi Level Pinning Due to Interface Traps Inside the Conduction Band on the Inversion-Layer Mobility in InGaAs Metal–Oxide–Semiconductor Field Effect Transistors
英文:	Impact of Fermi Level Pinning Due to Interface Traps Inside the Conduction Band on the Inversion-Layer Mobility in InGaAs Metal–Oxide–Semiconductor Field Effect Transistors

著者

和文:	Noriyuki Taoka, Masafumi Yokoyama, Sang Hyeon Kim, Rena Suzuki, Sunghoon Lee, Ryo Iida, Takuya Hoshii, Wipakorn Jevasuwan, Tatsuro Maeda, Tetsuji Yasuda, Osamu Ichikawa, Noboru Fukuhara, Masahiko Hata, Mitsuru Takenaka, Shinichi Takagi.
英文:	Noriyuki Taoka, Masafumi Yokoyama, Sang Hyeon Kim, Rena Suzuki, Sunghoon Lee, Ryo Iida, Takuya Hoshii, Wipakorn Jevasuwan, Tatsuro Maeda, Tetsuji Yasuda, Osamu Ichikawa, Noboru Fukuhara, Masahiko Hata, Mitsuru Takenaka, Shinichi Takagi.

言語

English

掲載誌/書名

和文:	IEEE Transactions on Device and Materials Reliability
英文:	IEEE Transactions on Device and Materials Reliability

巻, 号, ページ

Vol. 13 No. 4 pp. 456-462

出版年月

2013年12月

出版者

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英文:

会議名称

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開催地

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公式リンク

DOI