Insulating conduction in Sn/Si(111): Possibility of a Mott insulating ground state and metallization/localization induced by carrier doping

論文・著書情報

タイトル

和文:	Insulating conduction in Sn/Si(111): Possibility of a Mott insulating ground state and metallization/localization induced by carrier doping
英文:	Insulating conduction in Sn/Si(111): Possibility of a Mott insulating ground state and metallization/localization induced by carrier doping

著者

和文:	平原徹, Komorida, T, Gu, Y, Nakamura, F, Idzuchi, H, Morikawa, H, Hasegawa, S.
英文:	Toru Hirahara, Komorida, T, Gu, Y, Nakamura, F, Idzuchi, H, Morikawa, H, Hasegawa, S.

言語

English

掲載誌/書名

和文:	Physical Review B
英文:	Physical Review B

巻, 号, ページ

Vol. 80 No. 23

出版年月

2009年

出版者

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英文:

会議名称

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英文:

開催地

和文:
英文:

公式リンク

DOI