Impact of Fermi level pinning inside conduction band on electron mobility of In <inf>x</inf>Ga <inf>1-x</inf>As MOSFETs and mobility enhancement by pinning modulation
英文:
Impact of Fermi level pinning inside conduction band on electron mobility of In <inf>x</inf>Ga <inf>1-x</inf>As MOSFETs and mobility enhancement by pinning modulation
著者
和文:
Taoka, N.,
Yokoyama, M.,
Kim, S.H.,
Suzuki, R.,
Iida, R.,
Lee, S.,
Hoshii, T.,
Jevasuwan, W.,
Maeda, T.,
Yasuda, T.,
Ichikawa, O.,
Fukuhara, N.,
Hata, M.,
Takenaka, M.,
Takagi, S.,
星井拓也.
英文:
Taoka, N.,
Yokoyama, M.,
Kim, S.H.,
Suzuki, R.,
Iida, R.,
Lee, S.,
Hoshii, T.,
Jevasuwan, W.,
Maeda, T.,
Yasuda, T.,
Ichikawa, O.,
Fukuhara, N.,
Hata, M.,
Takenaka, M.,
Takagi, S.,
Takuya Hoshii.
言語
English
掲載誌/書名
和文:
Technical Digest - International Electron Devices Meeting, IEDM
英文:
Technical Digest - International Electron Devices Meeting, IEDM
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