Room-temperature surface-activated bonding (SAB) is a promising technology in large-scale hybrid photonic integration. To realize a membrane laser with low thermal resistance on Si without benzocyclobutene (BCB) bonding, a GaInAsP/InP membrane structure with a five-quantum-well activelayerwasbonded on Si successfully using SAB assisted bya thin a-Si film. The bonding strength reached a measurement limitation strength of 2.47 MPa for a 2 inch wafer with a thin 8.2 nm a-Si bonding layer without any annealing process for bonding. Over 90% of the bonding area, uniform photoluminescence intensity, and a well-maintained quantum-well structure were achieved after the InP-substrate removal.
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