Low temperature plasma technology plays an important role in the semiconductor manufacturing processes. To predict and control the CCP system more accurately, this study uses two different numerical simulation methods, that is, fluid dynamic method and particle-in-cell method. When the charged particles are in the state of non-thermodynamic equilibrium, the traditional fluid method will bring errors to the results. The PIC method can better display the density curves of electrons and ions because it can directly track the macroparticles. The disadvantage for the PIC method is that computational time cost is too high to get the precise data.
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