We have proposed integrated waveguide structure suitable for mid- and near- infrared light propagation using Si and CaF2 heterostructures on Si substrate. Using a fabrication process based on etching, lithography and crystal growth techniques, we have formed a slab-waveguide structure with a current injection mechanism on a SOI substrate, which would be a key component for Si/CaF2 quantum cascade lasers and other optical integrated systems. The propagation of light at a wavelength of 1.55 μm through a Si/CaF2 waveguide structure have been demonstrated for the first time using a structure with a Si/CaF2 multilayered core with 610-nm-thick, waveguide width of 970 nm, which satisfies single-mode condition in the horizontal direction within a tolerance of fabrication accuracy. The waveguide loss for transverse magnetic (TM) mode has been evaluated. The cause of the loss was discussed by estimating the edge roughness scattering and free carrier absorption, which suggests further reduction of the loss would be possible.
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