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タイトル
和文:3次元磁気メモリの実現に向けたCoPtの電解めっき膜 
英文:Electrophoretically deposited CoPt film for realization of 3D domain wall motion memory 
著者
和文: HUANG TONGSHUANG, 高村 陽太, 齋藤 美紀子, Md M. Hasan, 荒木 大輝, 本間 敬之, 葛西 伸哉, 山田 圭介, 園部 義明, 小野 輝男, 中川 茂樹.  
英文: T. Huang, Y. Takamura, M. Saito, Md M. Hasan, D. Araki, T. Homma, S. Kasai, K. Yamada, Y. Sonobe, T. Ono, S. Nakagawa.  
言語 English 
掲載誌/書名
和文:信学技報 
英文:IEICE Tech. Rep. 
巻, 号, ページ vol. 122    no. 297    pp. 11-16
出版年月 2022年12月1日 
出版者
和文:電気情報通信学会 
英文:THE INSTITUTE OF ELECTRONICS, INFORMATION AND COMMUNICATION ENGINEERS 
会議名称
和文:磁気記録・情報ストレージ研究会(MRIS) 
英文:IEICE Technical Committee on Magnetic Recording & Information Storage (MRIS) 
開催地
和文:愛媛県 
英文:Ehime 
公式リンク https://ken.ieice.org/ken/paper/20221208qCoM/eng/
 
アブストラクト CoPt alloy is the appropriate material for the stacking layers owing to strong PMA for Co-rich alloy and controllability of Ku by changing the Co composition. CoPt stacking layers with different alternatively Ku are required. To deposit such stacking layers, the electrodeposition condition has been studied. CoPt layers with various compositions were successfully deposited by adjusting the applied voltage. However, the surface thin film deposited by DC electrodeposition was too rough for spin device fabrication. We conducted pulse electrodeposition and obtained an ultra-thin film with smooth morphology and good magnetic property.

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