Journal Paper

• C-I. Kuo, H-T. Hsu, Y-L. Chen, C-Y. Wu, E. Y. Chang, Y. Miyamoto, W-C. Tsern, K. C. Sahoo. RF Performance Improvement of Metamorphic High-Electron Mobility Transistor Using (InxGa1 - xAs)m/(InAs)n Superlattice-Channel Structure for Millimeter-Wave Applications, IEEE Electron Device Letters, vol. 31, no. 7, pp. 677-679, July 2010.

International Conference (Reviewed)

• Chien-I Kuo, Heng-Tung Hsu, Chung Li, Chien Ying Wu, Edward Yi Chang, YASUYUKI MIYAMOTO, Y.-L. Chen, D. Biswas. A 40-nm-Gate InAs/InGaAs Composite-Channel HEMT with 2200 mS/mm and 500-GHz fT, IEEE 21th Conference on Indium Phosphide and Related Materials (IPRM'09), May 2009.

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