論文

• Arisa Kimura, Kaito Kuroki, Ryoichiro Yoshida, Kenji Hirakawa, Masayuki Iwase, Munehiro Ogasawara, Takashi Yoda, Noboru Ishihara, Hiroyuki Ito. Simulation of a ring oscillator operation during γ-ray irradiation using the TID response model of MOSFETs and its experimental verification, Japanese Journal of Applied Physics, Vol. 62, SC1060, Feb. 2023.
• Kaito Kuroki, Arisa Kimura, Kenji Hirakawa, Masayuki Iwase, Munehiro Ogasawara, Takashi Yoda, Noboru Ishihara, Hiroyuki Ito. Design and Fabrication Results of Z-gate Layout MOSFETs for Radiation Hardness Integrated Circuit, Japanese Journal of Applied Physics, Vol. 62, SC1045, Jan. 2023.
• Takashi Yoda, Noboru Ishihara, Yuta Oshima, Motoki Ando, Kohei Kashiwagi, Ryoichiro Yoshida, Arisa Kimura, Kaito Kuroki, Shinsuke Nabeya, Kenji Hirakawa, Masayuki Iwase, Munehiro Ogasawara, Hiroyuki Ito. Total ionizing dose effect on 2-D array data transfer ICs designed and fabricated by 0.18 μm CMOS technology, Japanese Journal of Applied Physics, Vol. 61, SC1081-1, Mar. 2022.

国際会議発表 (査読有り)

• Arisa Kimura, Kaito Kuroki, Ryoichiro Yoshida, Kenji Hirakawa, Masayuki Iwase, Munehiro Ogasawara, Takashi Yoda, Noboru Ishihara, Hiroyuki Ito. CMOS Inverter-Base Ring Oscillator Design and Evaluation Against gray Total Ionizing Dose Effect, International Conference on Solid State Devices and Materials, International Conference on Solid State Devices and Materials, Sept. 2022.

国際会議発表 (査読なし・不明)

• Kaito Kuroki, Arisa Kimura, Kenji Hirakawa, Masayuki Iwase, Munehiro Ogasawara, Takashi Yoda, Noboru Ishihara, Hiroyuki Ito. A Z-gate Layout MOSFET Design and Verification of Radiation Hardness against γ-ray Total Ionizing Dose Effect, International Conference on Solid State Devices and Materials, International Conference on Solid State Devices and Materials, JJAP, Sept. 2022.

国内会議発表 (査読なし・不明)

• 木村有佐, 黒木海斗, 吉田僚一郎, 平川顕二, 岩瀬正幸, 小笠原宗博, 依田孝, 石原昇, 伊藤浩之. リング発振ICのγ線照射影響の回路モデル化, Mar. 2022.
• 黒木 海斗, 木村 有佐, 吉田 僚一郎, 平川 顕二, 岩瀬 正幸, 小笠原 宗博, 依田 孝, 石原 昇, 伊藤 浩之. CMOS集積回路におけるリーク電流への γ線照射の影響, Mar. 2022.

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