論文

• H Wong, B.L. Yang, S. Dong, HIROSHI IWAI, Kuniyuki KAKUSHIMA, Ahmet Parhat. Current conduction and stability of CeO2/La2O3 stacked gate dielectric, APPLIED PHYSICS LETTERS, Vol. 101, 233507, Dec. 2012.
• B.L. Yang, H Wong, Kuniyuki KAKUSHIMA, HIROSHI IWAI. Improving the electrical characteristics of MOS transistors with CeO2/ La2O3 stacked gate dielectric, Microelectronics Realiability, Vol. 52, pp. 1613-1616, Aug. 2012.
• H Wong, B.L. Yang, Kuniyuki KAKUSHIMA, Ahmet Parhat, HIROSHI IWAI. Effects of aluminum doping on lanthanum oxide gate dielectric films, Vacuum, Vol. 86, No. 7, pp. 929-932, Feb. 2012.
• B Sen, H Wong, B.L. Yang, P.K. Chu, Kuniyuki KAKUSHIMA, HIROSHI IWAI. Effects of nitrogen incorporation into lanthana film by plasma immersion ion implantation, Solid-State Electronics, Vol. 53, pp. 355-358, 2009.

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