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藤崎芳久 研究業績一覧 (9件)
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論文
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Gwang-Geun Lee,
Yosihisa Fujisaki,
Hiroshi Ishiwara,
Eisuke Tokumitsu.
Low-voltage Operation of Ferroelectric Gate Thin Film Transistors Using Indium Gallium Zinc Oxide-Channel and Ferroelectric Polymer Poly(vinylidene fluoride-trifluoroethylene),
Applied Physics Express,
Vol. 4,
pp. 091103-1-3,
Aug. 2011.
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Gwang-Geun Lee,
Eisuke Tokumitsu,
Sung-Min Yoon,
Yosihisa Fujisaki,
Joo-Won Yoon,
Hiroshi Ishiwara.
The flexible non-volatile memory devices using oxide semiconductors and ferroelectric polymer poly(vinylidene fluoride-trifluoroethylene),
Applied Physics Letters,
Vol. 99,
pp. 012901-1-3,
July 2011.
国際会議発表 (査読有り)
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G.-G. Lee,
S.-M. Yoon,
J.-W. Yoon,
Y. Fujisaki,
H. Ishiwara,
E. Tokumitsu.
Flexible Ferroelectric-TFTs Using IGZO-Channel and P(VDF-TrFE),
The 17th International Display Workshops(IDW’10),
Dec. 2010.
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GwangGeun Lee,
Sung-ming Yoon,
Yosihisa Fujisaki,
Hiroshi Ishiwara,
Eisuke Tokumitsu.
Fabrication of Organic P(VDF-TrFE) Film on PEN Substrate for Flexible IGZO-channel Ferroelectric-gate TFTs,
2010 fall meeting, Materials Research Society,
Nov. 2010.
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GwangGeun Lee,
Sung-ming Yoon,
JooWon Yoon,
Yosihisa Fujisaki,
Hiroshi Ishiwara,
Eisuke Tokumitsu.
Fabrication of IGZO-channel Ferroelectric-gate TFTs with Organic P(VDF-TrFE) Film,
2009 fall meeting, Materials Research Society,
Nov. 2009.
国内会議発表 (査読有り)
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Lee Gwang Geun,
Yosihisa Fujisaki,
Hiroshi Ishiwara,
Eisuke Tokumitsu.
Low voltage operation of ferroelectric thin film transistors using P(VDF-TrFE) and IGZO,
第72回応用物理学会学術講演会,
Aug. 2011.
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Gwang-Geun Lee,
Sung-Min Yoon,
Joo-Won Yoon,
Yosihisa Fujisaki,
Hiroshi Ishiwara,
Eisuke Tokumitsu.
Flexible non-volatile memory TFT with IGZO-channel and ferroelectric polymer,
第71回応用物理学会学術講演会,
Sept. 2010.
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Gwang-Geun Lee,
Sung-Min Yoon,
Joo-Won Yoon,
藤崎芳久,
石原宏,
徳光永輔.
有機強誘電体P(VDF-TrFE)と無機酸化物半導体IGZOを用いた強誘電体ゲート薄膜トランジスタの作製と評価,
信学技報、SDM2010-16、OME2010-16(2010-04),
社団法人電子情報通信学会,
Vol. 110,
No. 15,
pp. 71-75,
Apr. 2010.
国内会議発表 (査読なし・不明)
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