|
水谷章成 研究業績一覧 (4件)



- 2024
- 2023
- 2022
- 2021
- 2020


- 全件表示
論文
-
Nobuhiko Nishiyama,
Akimasa Mizutani,
Nobuaki Hatori,
Fumio Koyama,
Kenichi Iga.
A completely single-mode and single polarization vertical-cavity surface emitting lasers grown on GaAs (311)B substrate,
Jpn. J. Appl. Phys.,
vol. 37,
no. 6A,
pp. L640-L642,
July 1998.
-
Akimasa Mizutani,
Nobuaki Hatori,
Nobuhiko Nishiyama,
FUMIO KOYAMA,
Kenichi Iga.
MOCVD grown InGaAs/GaAs vertical cavity surface emitting laser on GaAs (311)B substrate,
Electronics Letters,
Vol. 33,
No. 22,
pp. 1877-1878,
Oct. 1997.
-
Akimasa Mizutani,
Nobuaki Hatori,
Ohnoki, N,
Nobuhiko Nishiyama,
Ohtake, N,
FUMIO KOYAMA,
Kenichi Iga.
P-type AlAs growth on a GaAs (311)B substrate using carbon auto-doping for low resistance GaAs/AlAs distributed Bragg reflectors,
Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers,
Vol. 36,
No. 11,
pp. 6728-6729,
Aug. 1997.
-
Hatori, N,
Mizutani, A,
Nobuhiko Nishiyama,
Koyama, F,
Iga, K.
Threshold reduction of p-type delta-doped InGaAs/GaAs quantum well lasers by using auto-doping of carbon,
Electronics Letters,
Vol. 33,
No. 12,
pp. 1096-1097,
June 1997.
[ BibTeX 形式で保存 ]
[ 論文・著書をCSV形式で保存
]
[ 特許をCSV形式で保存
]
|