論文

• W. Feng, R. Hettiarachchi, Soshi Sato, Kuniyuki KAKUSHIMA, M. Niwa, HIROSHI IWAI, Keisaku Yamada, Kenji Ohmori. Advantages of Silicon Nanowire Metal-Oxide-Semiconductor Field-Effect Transistors over Planar Ones in Noise Properties, Japanese Journal of Applied Physics, Vol. 51, pp. 04DC06-1-04DC06-5, Apr. 2012.

国際会議発表 (査読なし・不明)

• W. Feng, R. Hettiarachchi, Soshi Sato, Kuniyuki KAKUSHIMA, M. Niwa, HIROSHI IWAI, Keisaku Yamada, Kenji Ohmori. Advantages of Silicon Nanowire MOSFETs over Planar Ones Investigated from the Viewpoints of Static and Noise Properties, 2011 International Conference on Solid State Devices and Materials(SSDM 2011), 2011.

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